Dear Readers,
In this exam, 100 questions will be asked from General Engineering (GE) section. We are providing quizzes on alternate basis- Electronics & Telecommunication Engineering / Physics / Computer Science and Information Technology (CS IT). It will help you to score good in GE section.The Examination will be held from 25th to 30th November 2017 in a computer based pattern.
Q1. The sensitivity of human eyes is maximum at
(a) white portion of spectrum
(b) green portion of spectrum
(c) red portion of spectrum
(d) violet portion of spectrum
Q2. In a bipolar transistor, the base collector junction has
(a) forward bias
(b) reverse bias
(c) zero bias
(d) zero or forward bias
Q3. An intrinsic silicon sample has 1 million free electrons at room temperature. As the temperature is increased
(a) the number of free electrons increases
(b) the number of free electrons increases but the number of holes decreases
(c) the number of free electrons and holes increase by the same amount
(d) the number of free electrons and holes increase but not by the same amount
Q4. What is the necessary a.c. input power from the transformer secondary used in a half wave rectifier to deliver 500 W of d.c. power to the load?
(a) 1232 W
(b) 848 W
(c) 616 W
(d) 308 W
Q5. In a semi-conductor diode, the barrier offers opposition to
(a) holes in P-region only
(b) free electrons in N-region only
(c) majority carriers in both regions
(d) majority as well as minority carriers in both regions
Q6. In a half wave rectifier, the load current flows
(a) only for the positive half cycle of the input signal
(b) only for the negative half cycle of the input signal
(c) for full cycle
(d) for less than fourth cycle
Q7. For a NPN bipolar transistor, what is the main stream of current in the base region?
(a) Drift of holes
(b) Diffusion of holes
(c) Drift of electrons
(d) Diffusion of electrons
Q8. Assertion (A): A VMOS can handle much larger current than other field effect transistors.
Reason (R): In a VMOS the conducting channel is very narrow.
(a) Both A and R are true and R is correct explanation of A
(b) Both A and R are true but R is not a correct explanation of A
(c) A is true but R is false
(d) A is false but R is true
Q9. In monolithic ICs, all the components are fabricated by
(a) diffusion process
(b) oxidation
(c) evaporation
(d) none
Q10. Which one of the following is not a characteristic of a ferroelectric material?
(a) High dielectric constant
(b) No hysteresis
(c) Ferroelectric characteristic only above the curie point
(d) Electric dipole moment
Solutions
S1. Ans.(b)
S2. Ans.(b)
S3. Ans.(c)
S4. Ans.(a)
S5. Ans.(c)
S6. Ans.(a)
S7. Ans.(b)
S8. Ans.(c)
S9. Ans.(a)
S10. Ans.(c)
(a) white portion of spectrum
(b) green portion of spectrum
(c) red portion of spectrum
(d) violet portion of spectrum
Q2. In a bipolar transistor, the base collector junction has
(a) forward bias
(b) reverse bias
(c) zero bias
(d) zero or forward bias
Q3. An intrinsic silicon sample has 1 million free electrons at room temperature. As the temperature is increased
(a) the number of free electrons increases
(b) the number of free electrons increases but the number of holes decreases
(c) the number of free electrons and holes increase by the same amount
(d) the number of free electrons and holes increase but not by the same amount
Q4. What is the necessary a.c. input power from the transformer secondary used in a half wave rectifier to deliver 500 W of d.c. power to the load?
(a) 1232 W
(b) 848 W
(c) 616 W
(d) 308 W
Q5. In a semi-conductor diode, the barrier offers opposition to
(a) holes in P-region only
(b) free electrons in N-region only
(c) majority carriers in both regions
(d) majority as well as minority carriers in both regions
Q6. In a half wave rectifier, the load current flows
(a) only for the positive half cycle of the input signal
(b) only for the negative half cycle of the input signal
(c) for full cycle
(d) for less than fourth cycle
Q7. For a NPN bipolar transistor, what is the main stream of current in the base region?
(a) Drift of holes
(b) Diffusion of holes
(c) Drift of electrons
(d) Diffusion of electrons
Q8. Assertion (A): A VMOS can handle much larger current than other field effect transistors.
Reason (R): In a VMOS the conducting channel is very narrow.
(a) Both A and R are true and R is correct explanation of A
(b) Both A and R are true but R is not a correct explanation of A
(c) A is true but R is false
(d) A is false but R is true
Q9. In monolithic ICs, all the components are fabricated by
(a) diffusion process
(b) oxidation
(c) evaporation
(d) none
Q10. Which one of the following is not a characteristic of a ferroelectric material?
(a) High dielectric constant
(b) No hysteresis
(c) Ferroelectric characteristic only above the curie point
(d) Electric dipole moment
Solutions
S1. Ans.(b)
S2. Ans.(b)
S3. Ans.(c)
S4. Ans.(a)
S5. Ans.(c)
S6. Ans.(a)
S7. Ans.(b)
S8. Ans.(c)
S9. Ans.(a)
S10. Ans.(c)
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